??? 10/15/04 13:39 Read: times |
#79358 - RE: FLASH OR EEPROM ??? Responding to: ???'s previous message |
In the case of the Atmel ED2 the internal scheme for writing to the data EEPROM is apparently not page based.
In other words, you can byte write to location 0x00 until it fails (100,000+ writes) then do the same again at location 0x01. |
Topic | Author | Date |
PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: PROGRAM BYTE IAP 89C51RD2 ACC !00 | 01/01/70 00:00 | |
RE: FLASH OR EEPROM ??? | 01/01/70 00:00 | |
RE: FLASH OR EEPROM ??? | 01/01/70 00:00 | |
RE: FLASH OR EEPROM ??? | 01/01/70 00:00 | |
RE: FLASH OR EEPROM ??? | 01/01/70 00:00 | |
RE: FLASH OR EEPROM ??? | 01/01/70 00:00 | |
RE: FLASH OR EEPROM ??? | 01/01/70 00:00 | |
RE: FLASH OR EEPROM ???![]() | 01/01/70 00:00 |