| ??? 07/16/07 22:01 Read: times |
#141944 - Atmel DataFlash |
I know that issues with Dataflash devices has been discussed in this forums before but I want to ask something different. The minimum erase window of DataFlash is 4KB so it means each time you want to modify a single byte in a random block you must erase the whole 4KB block. So as far as I understand it means that I should backup the whole 4KB block and write it back with modified data after the erase operation is completed. Obviously,it makes random writes very inefficient. You need 4KB of extra RAM for backup/write-back purpose. I don't want to use a parallel flash because of space and bus connection consideration. In some cases I need to use a x51 derivative with 1 KB of on-chip Ram (89c51rc2).
My question is that does anyone has experience/suggestion to use a serial flash in a device where random Write access is required. Thanks in advance Farshad |
| Topic | Author | Date |
| Atmel DataFlash | 01/01/70 00:00 | |
| Pages and blocks | 01/01/70 00:00 | |
| 26xxx series vs. 45xxx series | 01/01/70 00:00 | |
| Oops! | 01/01/70 00:00 | |
| Atmel flash | 01/01/70 00:00 | |
| Missed the point? | 01/01/70 00:00 | |
| Ya, missed the point | 01/01/70 00:00 | |
| Such is the world of flash | 01/01/70 00:00 | |
| More capacity... | 01/01/70 00:00 | |
| A, possibly silly, idea | 01/01/70 00:00 | |
| RAID on EEPROM...?! | 01/01/70 00:00 | |
| Access time...? | 01/01/70 00:00 | |
If reads are the issue | 01/01/70 00:00 | |
| RE: Random write and capacity | 01/01/70 00:00 | |
| Was stuck in 26xxx series! | 01/01/70 00:00 |